Bright Quantum inc.
Conference
Conference- Table
No. | Subject | Publication Date |
---|---|---|
134 | A new approach to quantitative SERS with high enhancement | 2022-01-24 |
133 | A novel approach for highly-sensitive quantitative SERS with holespheregold nanogaps | 2021-12-07 |
132 | A Broad-band Planar-microcavity Quantum-dot Single-photon Source for Zero-dimensional Semiconductor Physics | 2021-11-25 |
131 | 표면 증강 라만 산란을 위한 hole–sphere 나노갭 기판의 설계 및 대면적 제작 | 2021-07-07 |
130 | Detection of explosives by SERS platform using Metal Nanogap substrates | 2021-07-06 |
129 | A broadband solid-immersion-lens planar-microcavity quantum-dot singlephotonemitter | 2021-04-23 |
128 | Nanogap for SERS analytical platform for the detection of explosives | 2020-11-05 |
127 | Elliptical nanostructure for polarization control of quantum dot emission | 2019-12-12 |
126 | Broad band planar micro cavity for entangled photon pair study | 2019-12-03 |
125 | Metal nanogap structure for highly uniform and sensitive biosensor | 2019-10-24 |
124 | Broad band semiconductor quantum dot based quantum light sources | 2019-10-24 |
123 | 반도체 양자점 발광의 편광 제어를 위한 타원형 나노구조 제작 | 2019-04-26 |
122 | Plasmonic Nanoantenna of Hole-Sphere Nanogap for a Highly Uniform SERS Sensor | 2018-10-25 |
121 | 빛-물질 상호작용을 위한 금속 나노갭 구조에서의 공명파장 조절 및 분석 | 2018-10-25 |
120 | Radiative recombination rate enhancement of InAs/GaAs quantum dots by coupling to hyperbolicmetamaterials | 2018-07-31 |
119 | Generation of bright single photon and entangled photon pair using semiconductor quantum dot | 2018-07-05 |
118 | Quantum dot excitons coupled to a hyperbolic metamaterial | 2018-04-26 |
117 | A highly uniform and sensitive SERS sensor consisted of hole-sphere nanogaps | 2018-01-29 |
116 | Quantum dots coupled to hyperbolic metamaterial | 2017-10-16 |
115 | Plasmonic Nanoantenna of Hole-Sphere Nanogaps for Surface Enhanced Raman Scattering Sensor | 2017-05-17 |
114 | 반도체 단일 양자점의 집광효율 증가를 위한 metal/dielectric coated truncated conical structure | 2017-04-21 |
113 | 단일 양자점의 위치 정의 및 단광자 광원 제작 | 2017-04-19 |
112 | 넓은 면적에서 균일하며 높은 증강을 보이는 금속 나노 갭 구조의 SERS 특성 | 2016-10-21 |
111 | High brightness single photon emission from a semiconductor single quatum dot embeded in a solid immersion lens | 2016-09-29 |
110 | Single photon source based on a single quantum dot in a parabolic solid immersion lens | 2016-08-01 |
109 | Simultaneos lasing at ground and excited state in InAs/GaAs quantum dot laser diode due to inhomogeneous broadening | 2016-06-27 |
108 | A semiconductor quantum-dot in a parabolic solid immersion lens as a highly efficient single photon source | 2016-05-24 |
107 | Investigation of Double-state Lasing From an InAs/GaAs Quantum Dot Laser Diode with Spontaneous Emission and Coupled Rate Equations | 2016-05-24 |
106 | Microscopic picture of double-state lasing in a quantum dot laser diode | 2015-12-14 |
105 | Sub 100 nm metal aperture fabrication using PMMA and SiO2 lift-off method | 2015-12-09 |
104 | Parabolic solid immersion lens single photon source | 2015-12-08 |
103 | Experimental and numerical investigations of the level spacing in an InAs/InGaAsP quantum dot laser diode at 1.5 um | 2015-12-08 |
102 | Light collection strategies from truncated conical structures | 2015-10-23 |
101 | InAs/InGaAsP 양자점 레이저다이오드의 특성을 Rate-equation으로 수 치해석적으로 분석하여 얻어낸 양자점 에너지 상태 정보 | 2015-10-21 |
100 | Double-state lasing in an InAs/GaAs quantum dot laser : microscopic mechanism | 2015-09-24 |
99 | Rate-Equation을 통해 수치해석적으로 살펴본 InAs/GaAs 양자점 레이저다이오드의 Double-state Lasing 동작 특성 | 2015-04-24 |
98 | InAs/GaAs 단일 양자점의 편광특성 연구 | 2015-04-24 |
97 | Meta/dielectric coated single quantum dot structures for enhanced light collection efficiency | 2014-12-10 |
96 | Dynamics of excitons in a single quantum dot | 2014-10-14 |
95 | Dynamics of Exciton Complexes for a Single Quantum Dot Embedded in a Planar Micro-Cavity | 2014-08-15 |
94 | Simulation을 통한 단일 양자점 메사 구조의 집광효율 개선 | 2014-04-25 |
93 | A time-resolved study of exciton cascade in SQDs | 2013-10-01 |
92 | Determination of high-temperature quantum-dot character in InAs/GaAs quantum dots | 2013-07-02 |
91 | Observation of exciton-biexciton cascade process in an InAs/GaAs single quantum dot emitting at 1 μm | 2013-07-02 |
90 | Wetting layer effects on carrier dynamics in InGaAs / GaAs quantum dots grown by the migration enhanced epitaxy | 2013-07-02 |
89 | Exciton dynamics of an InAs single quantum dot embedded in a micro-cavity | 2013-07-02 |
88 | Dynamics of exciton in a single InAs quantum dot at 80 K | 2013-05-29 |
87 | 금속 격자 구조에서 양자점과 표면 플라즈몬 폴라리톤의 결합 | 2013-04-24 |
86 | 반도체 양자점의 표면 플라즈몬 폴라리톤 결합을 위한 구조 제작과 평평한 표면 구현 | 2013-04-24 |
85 | Optical properties of InGaAs/GaAs quantum dots grown by migration enhanced epitaxy | 2013-01-28 |
84 | Control of emission profile from a single quantum dot coupled with surface plasmon using metallic grating | 2013-01-28 |
83 | Carrier dynamics in quantum dot | 2012-11-08 |
82 | Metal Grating을 이용한 SPP가 결합된 양자점 신호의 측정 | 2012-10-24 |
81 | 습식 식각을 이용한 반도체 양자점의 표면 플라즈몬 폴라리톤(Surface Plasmon Polariton,SPP) 결합 구조 구현 | 2012-10-24 |
80 | MOCVD의 성장 중단법을 이용한 저밀도 InAs/InP 양자점의 성장 | 2012-08-22 |
79 | Room-temperature Quantum-dot Effects in InAs/GaAs Quantum Dots: Improvement by Modulation Doping | 2012-07-31 |
78 | Time resolved photoluminescence study of exciton in an InAs/GaAs single quantum dot at 1 um | 2012-07-31 |
77 | Gain recovery in a quantum dot semiconductor optical amplifier at 1.5 um | 2012-07-26 |
76 | Semiconductor quantum dots and their application for optical amplifiers | 2012-06-22 |
75 | Characterizations of InAs/InGaAsP/InP Quantum Dots-in-a-Well Structure Grown by MOCVD | 2012-05-23 |
74 | As/P Exchange Reaction of InAs/InGaAsP/InP Quantum Dots during Growth Interruption | 2012-02-09 |
73 | Photon-Photon Resonance를 이용하여 변조대역폭 증가시킨 Multi-Section 직접 변조 레이저 레이저 다이오드 | 2011-12-02 |
72 | 양자점 반도체 레이저다이오드의 Double-state Lasing 동작 원리 | 2011-10-21 |
71 | Higher Order Resonances를 이용해 직접변조대역폭 증가시키는 간단한 Multi-Section 레이저 형태의 고속 직접 변조 레이저 다이오드의 개발 | 2011-10-21 |
70 | InAs/InGaAsP/InP Dots-in-a-well (DWELL) 구조로 제작된 레이저 다이오드의 동작특성 | 2011-10-20 |
69 | Streak camera를 이용한 InAs/GaAs 단일 양자점에서의 excton 과 bi-exciton의 lifetime 측정 | 2011-04-14 |
68 | Study of Two-state Lasing Behavior from InAs/GaAs Quantum Dot Laser Diodes | 2011-04-14 |
67 | Gain recovery characteristics of an InAs/InGaAsP quantum dot amplifier operating at 1.5 μm: wavelength dependence | 2011-01-22 |
66 | 상온 1.3 um에서 발광하는 InAs/GaAs 양자점 excited state의 운반자 동역학 | 2010-10-20 |
65 | Ultrafast Gain and Phase Dynamics of an InAs/InGaAsP Quantum Dot Semiconductor Optical Amplifier at 1.5 μm | 2010-10-20 |
64 | Gain dynamics in QDSOA at 1.5 um | 2010-10-04 |
63 | Defect contribution on the performance of InGaN multiple quantum well laser-diode emitting at 405 nm | 2010-07-29 |
62 | High quality GaSb/AlGaSb multiple quantum wells grown on Si substrate using quantum dot dislocation blocking layers | 2010-07-29 |
61 | Gain and phase dynamics of InAs/InGaAsP QDSOA at 1.5 μm | 2010-07-27 |
60 | 이득고정 반도체 광증폭기의 이득영역에서의 Slow light 발생 원리 | 2010-04-21 |
59 | Efficient photoluminescence from GaSb/AlGaSb multiple quantum wells grown on Si substrate | 2010-01-24 |
58 | Enhanced room-temperature quantum-dot effects in modulation- doped InAs/GaAs quantumdots | 2009-12-09 |
57 | Tunable slow and fast lights using semiconductor optical amplifiers | 2009-11-04 |
56 | EVOLUTIONARY PIEZOELECTRIC FIELD SCREENING IN INGAN/GAN MULTIPLE QUANTUM WELLS BY LOCALIZED CARRIERS | 2009-10-18 |
55 | spectroscopic determination of defect contribution in InGaN/GaN optical devices | 2009-10-18 |
54 | Tunable slow and fast lights using semicondoctor optical amplifiers | 2009-09-29 |
53 | 160 GHz wavelength conversion using four-wave mixing in quantum dots | 2009-06-01 |
52 | Gain and High Speed Transmission Characteristics of InAs/InP Quantum Dot Semiconductor Optical Amplifiers | 2009-03-25 |
51 | Time-resolved photoluminescence studies of InGaN/GaN quantum wells on GaN homo substrates | 2007-09-16 |
50 | Hybrid WDM/TDM-PON Using Remotely Pumped Optical Amplifier | 2007-09-16 |
49 | Characteristics of InGaAs/InGaAsP/InP Quantum Dot Semiconductor Optical Amplifiers | 2007-08-22 |
48 | Lasing Characteristics of InGaAs/InP Quantum Dot Lasers | 2007-08-22 |
47 | High-speed and efficient wavelength conversion in quantum dots | 2007-07-29 |
46 | Slow and Fast Lights in a Quantum Dot Semiconductor Optical Amplifier near 1.55 um | 2007-07-29 |
45 | Doping dependence of the carrier lifetime of p-type modulation-doped InAs/GaAs quantum dots | 2007-07-15 |
44 | MOCVD Growth of 1.5um InGaAs/InGaAsP/InP Quantum Dots and Application to Semiconductor Optical Amplifiers | 2007-07-06 |
43 | Enhanced System Performance of an RSOA based Hybrid WDM/TDM-PON System using a Remotely Pumped Erbium-Doped Fiber Amplifier | 2007-03-30 |
42 | Effective Gain Clamping of Semiconductor Optical Amplifiers by Injecting Broad-Band Self-Generated Amplified Spontaneous Emission | 2007-03-26 |
41 | Fabrication and characterization of InAs quantum dot semiconductor optical amplifiers on InP operating at 1.5 μm | 2007-01-21 |
40 | Characteristics of In(Ga)As/InGaAsP quantum dot laser diodes lasing at 1.55 ㎛ | 2007-01-21 |
39 | Quantum Dot LD and SOA | 2006-09-03 |
38 | Comparison of carrier lifetime and excited state for In(Ga)As quantum dots in the quaternary barriers on InP substrate | 2006-07-24 |
37 | Direct observation of electronic couplings between 1.5 um emitting InGaAs/InGaAsP quantum dots on InP | 2006-07-24 |
36 | An automatic gain-controlled Raman/gain-clamped SOA for metro WDM networks with changes in span loss | 2006-03-05 |
35 | Characteristics of In(Ga)As quantum dot lasers on InP emitting at 1.5um in continuous wave mode | 2006-01-21 |
34 | Inhomogeneous gain characteristics of InGaAs/InGaAsP quantum dot laser diodes | 2005-12-02 |
33 | Electronic couplings in InGaAs/InGaAsP quantum dots emitting at 1.5 um | 2005-12-02 |
32 | Quantum dots emitting at 1.5 um: optical properties and applications | 2005-12-02 |
31 | Decay characteristics in a vertically coupled InAs/GaAs quantum dot | 2005-09-18 |
30 | Optical properties of In-rich InGaN/GaN multiple quantum wells grown by MOCVD | 2005-08-28 |
29 | Continuous wave operation of quantum dot laser diodes at 1.5μm above room temperature | 2005-07-05 |
28 | SOA-based metro WDM systems (invited) | 2005-07-05 |
27 | Tunable frequency erbium-doped fiber ring laser with 25 GHz channel spacingon the ITU-T grid | 2005-03-06 |
26 | A simple and low-cost 1625 nm OTDR monitoring system for 350 km WDM | 2005-03-06 |
25 | A variable-gain optical amplifier for metro WDM networks with mixed span losses: A gain-clamped semiconductor optical amplifier combined with a Raman | 2005-03-06 |
24 | Optical characteristics of InGaAs quantum dots on (100) InP substrate for 1.5 μm laser diodes | 2004-12-16 |
23 | Optical characteristics of In(Ga)As quantum dots on InP substrate and their lasing characteristics at 1.5 um at room temperature | 2004-11-05 |
22 | An optical amplifier for metro WDM networks, based on a gain-clamped semiconductor optical amplifier (invited) | 2004-11-04 |
21 | Room temperature operation of 1.5 μm InGaAs/InGaAsP/InP quantum dot lasers grown by MOCVD | 2004-09-18 |
20 | Effect of wavefunction confinement in quantum dots on level spacing, lifetime and temperature behaviors | 2004-09-18 |
19 | Room temperature cw operation of InGaAs/InGaAsP/InP quantum dot lasers | 2004-09-16 |
18 | Carrier localization behavior in InGaNAs/GaAs(N) quantum wells | 2004-07-01 |
17 | Strong carrier-phonon interaction in InAs/GaAs quantum dot: Fluorescence line narrowing observed from controllable III-V intrinsic localization center | 2004-07-01 |
16 | Optical characteristics of In(Ga)As quantum dots on InP substrate for 1.5 um laser diodes | 2004-07-01 |
15 | Relation of energy level spacing, dot height and carrier lifetime in quantum dots from a view point of zero dimensionality | 2004-07-01 |
14 | Optical and Lasing Characteristics of 1.55 um InGaAs/InGaAsP/InP Quantum Dots Grown by MOCVD | 2004-05-01 |
13 | Demonstration of 16×10 Gb/s WDM transmission over 4×40 km of SMF using SOAs combined with Raman-pumped DCFs under dynamic add/drop situations | 2004-02-01 |
12 | Effective suppression of signal-wavelength dependent transients in a pump-controlled L-band EDFA | 2004-02-01 |
11 | 16×10 Gb/s WDM transmission over 160 km of SMF using gain clamped SOAs with Raman pumped dispersion compensating fibers | 2003-09-01 |
10 | Optical Characteristics of InAsN/GaAs Quantum Dots Emitting at 1.3 um | 2003-08-01 |
9 | A Simple Method to Determine Strains in InGaNAs/GaAs Quantum Wells | 2003-08-01 |
8 | A gain clamped semiconductor optical amplifier combined with a distributed Raman fiber amplifier: a good candidate as an inline amplifier for WDM netw | 2003-07-01 |
7 | Demonstration of 16x10 Gb/s WDM transmission over 5x80 km using distributed Raman amplifiers and gain clamped semiconductor amplifiers as inline ampli | 2003-06-01 |
6 | Effects of Nitrogen Incorporation in In(Ga)As/GaAs Quantum Dots | 2002-10-01 |
5 | Electron and hole sublevels of quantum dots | 2002-07-01 |
4 | Determination of electron and hole sub-levels from InAs/GaAs quantum dots | 2002-07-01 |
3 | InAs/GaAs quantum dots emitting narrow and strong PL at 1.3 um | 2002-07-01 |
2 | InAs/GaAs quantum dots emitting at longer wavelength:closer to zero dimensional system | 2002-07-01 |
1 | Demonstration of a low-cost flat-gain L-band erbium-doped fiber amplifier by incorporatinga fiber Bragg grating | 2002-02-01 |