Bright Quantum inc.

Conference

Conference- Table

Update : 2023. 06. 05
No. Subject Publication Date
134 A new approach to quantitative SERS with high enhancement 2022-01-24
133 A novel approach for highly-sensitive quantitative SERS with holespheregold nanogaps 2021-12-07
132 A Broad-band Planar-microcavity Quantum-dot Single-photon Source for Zero-dimensional Semiconductor Physics 2021-11-25
131 표면 증강 라만 산란을 위한 hole–sphere 나노갭 기판의 설계 및 대면적 제작 2021-07-07
130 Detection of explosives by SERS platform using Metal Nanogap substrates 2021-07-06
129 A broadband solid-immersion-lens planar-microcavity quantum-dot singlephotonemitter 2021-04-23
128 Nanogap for SERS analytical platform for the detection of explosives 2020-11-05
127 Elliptical nanostructure for polarization control of quantum dot emission 2019-12-12
126 Broad band planar micro cavity for entangled photon pair study 2019-12-03
125 Metal nanogap structure for highly uniform and sensitive biosensor 2019-10-24
124 Broad band semiconductor quantum dot based quantum light sources 2019-10-24
123 반도체 양자점 발광의 편광 제어를 위한 타원형 나노구조 제작 2019-04-26
122 Plasmonic Nanoantenna of Hole-Sphere Nanogap for a Highly Uniform SERS Sensor 2018-10-25
121 빛-물질 상호작용을 위한 금속 나노갭 구조에서의 공명파장 조절 및 분석 2018-10-25
120 Radiative recombination rate enhancement of InAs/GaAs quantum dots by coupling to hyperbolicmetamaterials 2018-07-31
119 Generation of bright single photon and entangled photon pair using semiconductor quantum dot 2018-07-05
118 Quantum dot excitons coupled to a hyperbolic metamaterial 2018-04-26
117 A highly uniform and sensitive SERS sensor consisted of hole-sphere nanogaps 2018-01-29
116 Quantum dots coupled to hyperbolic metamaterial 2017-10-16
115 Plasmonic Nanoantenna of Hole-Sphere Nanogaps for Surface Enhanced Raman Scattering Sensor 2017-05-17
114 반도체 단일 양자점의 집광효율 증가를 위한 metal/dielectric coated truncated conical structure 2017-04-21
113 단일 양자점의 위치 정의 및 단광자 광원 제작 2017-04-19
112 넓은 면적에서 균일하며 높은 증강을 보이는 금속 나노 갭 구조의 SERS 특성 2016-10-21
111 High brightness single photon emission from a semiconductor single quatum dot embeded in a solid immersion lens 2016-09-29
110 Single photon source based on a single quantum dot in a parabolic solid immersion lens 2016-08-01
109 Simultaneos lasing at ground and excited state in InAs/GaAs quantum dot laser diode due to inhomogeneous broadening 2016-06-27
108 A semiconductor quantum-dot in a parabolic solid immersion lens as a highly efficient single photon source 2016-05-24
107 Investigation of Double-state Lasing From an InAs/GaAs Quantum Dot Laser Diode with Spontaneous Emission and Coupled Rate Equations 2016-05-24
106 Microscopic picture of double-state lasing in a quantum dot laser diode 2015-12-14
105 Sub 100 nm metal aperture fabrication using PMMA and SiO2 lift-off method 2015-12-09
104 Parabolic solid immersion lens single photon source 2015-12-08
103 Experimental and numerical investigations of the level spacing in an InAs/InGaAsP quantum dot laser diode at 1.5 um 2015-12-08
102 Light collection strategies from truncated conical structures 2015-10-23
101 InAs/InGaAsP 양자점 레이저다이오드의 특성을 Rate-equation으로 수 치해석적으로 분석하여 얻어낸 양자점 에너지 상태 정보 2015-10-21
100 Double-state lasing in an InAs/GaAs quantum dot laser : microscopic mechanism 2015-09-24
99 Rate-Equation을 통해 수치해석적으로 살펴본 InAs/GaAs 양자점 레이저다이오드의 Double-state Lasing 동작 특성 2015-04-24
98 InAs/GaAs 단일 양자점의 편광특성 연구 2015-04-24
97 Meta/dielectric coated single quantum dot structures for enhanced light collection efficiency 2014-12-10
96 Dynamics of excitons in a single quantum dot 2014-10-14
95 Dynamics of Exciton Complexes for a Single Quantum Dot Embedded in a Planar Micro-Cavity 2014-08-15
94 Simulation을 통한 단일 양자점 메사 구조의 집광효율 개선 2014-04-25
93 A time-resolved study of exciton cascade in SQDs 2013-10-01
92 Determination of high-temperature quantum-dot character in InAs/GaAs quantum dots 2013-07-02
91 Observation of exciton-biexciton cascade process in an InAs/GaAs single quantum dot emitting at 1 μm 2013-07-02
90 Wetting layer effects on carrier dynamics in InGaAs / GaAs quantum dots grown by the migration enhanced epitaxy 2013-07-02
89 Exciton dynamics of an InAs single quantum dot embedded in a micro-cavity 2013-07-02
88 Dynamics of exciton in a single InAs quantum dot at 80 K 2013-05-29
87 금속 격자 구조에서 양자점과 표면 플라즈몬 폴라리톤의 결합 2013-04-24
86 반도체 양자점의 표면 플라즈몬 폴라리톤 결합을 위한 구조 제작과 평평한 표면 구현 2013-04-24
85 Optical properties of InGaAs/GaAs quantum dots grown by migration enhanced epitaxy 2013-01-28
84 Control of emission profile from a single quantum dot coupled with surface plasmon using metallic grating 2013-01-28
83 Carrier dynamics in quantum dot 2012-11-08
82 Metal Grating을 이용한 SPP가 결합된 양자점 신호의 측정 2012-10-24
81 습식 식각을 이용한 반도체 양자점의 표면 플라즈몬 폴라리톤(Surface Plasmon Polariton,SPP) 결합 구조 구현 2012-10-24
80 MOCVD의 성장 중단법을 이용한 저밀도 InAs/InP 양자점의 성장 2012-08-22
79 Room-temperature Quantum-dot Effects in InAs/GaAs Quantum Dots: Improvement by Modulation Doping 2012-07-31
78 Time resolved photoluminescence study of exciton in an InAs/GaAs single quantum dot at 1 um 2012-07-31
77 Gain recovery in a quantum dot semiconductor optical amplifier at 1.5 um 2012-07-26
76 Semiconductor quantum dots and their application for optical amplifiers 2012-06-22
75 Characterizations of InAs/InGaAsP/InP Quantum Dots-in-a-Well Structure Grown by MOCVD 2012-05-23
74 As/P Exchange Reaction of InAs/InGaAsP/InP Quantum Dots during Growth Interruption 2012-02-09
73 Photon-Photon Resonance를 이용하여 변조대역폭 증가시킨 Multi-Section 직접 변조 레이저 레이저 다이오드 2011-12-02
72 양자점 반도체 레이저다이오드의 Double-state Lasing 동작 원리 2011-10-21
71 Higher Order Resonances를 이용해 직접변조대역폭 증가시키는 간단한 Multi-Section 레이저 형태의 고속 직접 변조 레이저 다이오드의 개발 2011-10-21
70 InAs/InGaAsP/InP Dots-in-a-well (DWELL) 구조로 제작된 레이저 다이오드의 동작특성 2011-10-20
69 Streak camera를 이용한 InAs/GaAs 단일 양자점에서의 excton 과 bi-exciton의 lifetime 측정 2011-04-14
68 Study of Two-state Lasing Behavior from InAs/GaAs Quantum Dot Laser Diodes 2011-04-14
67 Gain recovery characteristics of an InAs/InGaAsP quantum dot amplifier operating at 1.5 μm: wavelength dependence 2011-01-22
66 상온 1.3 um에서 발광하는 InAs/GaAs 양자점 excited state의 운반자 동역학 2010-10-20
65 Ultrafast Gain and Phase Dynamics of an InAs/InGaAsP Quantum Dot Semiconductor Optical Amplifier at 1.5 μm 2010-10-20
64 Gain dynamics in QDSOA at 1.5 um 2010-10-04
63 Defect contribution on the performance of InGaN multiple quantum well laser-diode emitting at 405 nm 2010-07-29
62 High quality GaSb/AlGaSb multiple quantum wells grown on Si substrate using quantum dot dislocation blocking layers 2010-07-29
61 Gain and phase dynamics of InAs/InGaAsP QDSOA at 1.5 μm 2010-07-27
60 이득고정 반도체 광증폭기의 이득영역에서의 Slow light 발생 원리 2010-04-21
59 Efficient photoluminescence from GaSb/AlGaSb multiple quantum wells grown on Si substrate 2010-01-24
58 Enhanced room-temperature quantum-dot effects in modulation- doped InAs/GaAs quantumdots 2009-12-09
57 Tunable slow and fast lights using semiconductor optical amplifiers 2009-11-04
56 EVOLUTIONARY PIEZOELECTRIC FIELD SCREENING IN INGAN/GAN MULTIPLE QUANTUM WELLS BY LOCALIZED CARRIERS 2009-10-18
55 spectroscopic determination of defect contribution in InGaN/GaN optical devices 2009-10-18
54 Tunable slow and fast lights using semicondoctor optical amplifiers 2009-09-29
53 160 GHz wavelength conversion using four-wave mixing in quantum dots 2009-06-01
52 Gain and High Speed Transmission Characteristics of InAs/InP Quantum Dot Semiconductor Optical Amplifiers 2009-03-25
51 Time-resolved photoluminescence studies of InGaN/GaN quantum wells on GaN homo substrates 2007-09-16
50 Hybrid WDM/TDM-PON Using Remotely Pumped Optical Amplifier 2007-09-16
49 Characteristics of InGaAs/InGaAsP/InP Quantum Dot Semiconductor Optical Amplifiers 2007-08-22
48 Lasing Characteristics of InGaAs/InP Quantum Dot Lasers 2007-08-22
47 High-speed and efficient wavelength conversion in quantum dots 2007-07-29
46 Slow and Fast Lights in a Quantum Dot Semiconductor Optical Amplifier near 1.55 um 2007-07-29
45 Doping dependence of the carrier lifetime of p-type modulation-doped InAs/GaAs quantum dots 2007-07-15
44 MOCVD Growth of 1.5um InGaAs/InGaAsP/InP Quantum Dots and Application to Semiconductor Optical Amplifiers 2007-07-06
43 Enhanced System Performance of an RSOA based Hybrid WDM/TDM-PON System using a Remotely Pumped Erbium-Doped Fiber Amplifier 2007-03-30
42 Effective Gain Clamping of Semiconductor Optical Amplifiers by Injecting Broad-Band Self-Generated Amplified Spontaneous Emission 2007-03-26
41 Fabrication and characterization of InAs quantum dot semiconductor optical amplifiers on InP operating at 1.5 μm 2007-01-21
40 Characteristics of In(Ga)As/InGaAsP quantum dot laser diodes lasing at 1.55 ㎛ 2007-01-21
39 Quantum Dot LD and SOA 2006-09-03
38 Comparison of carrier lifetime and excited state for In(Ga)As quantum dots in the quaternary barriers on InP substrate 2006-07-24
37 Direct observation of electronic couplings between 1.5 um emitting InGaAs/InGaAsP quantum dots on InP 2006-07-24
36 An automatic gain-controlled Raman/gain-clamped SOA for metro WDM networks with changes in span loss 2006-03-05
35 Characteristics of In(Ga)As quantum dot lasers on InP emitting at 1.5um in continuous wave mode 2006-01-21
34 Inhomogeneous gain characteristics of InGaAs/InGaAsP quantum dot laser diodes 2005-12-02
33 Electronic couplings in InGaAs/InGaAsP quantum dots emitting at 1.5 um 2005-12-02
32 Quantum dots emitting at 1.5 um: optical properties and applications 2005-12-02
31 Decay characteristics in a vertically coupled InAs/GaAs quantum dot 2005-09-18
30 Optical properties of In-rich InGaN/GaN multiple quantum wells grown by MOCVD 2005-08-28
29 Continuous wave operation of quantum dot laser diodes at 1.5μm above room temperature 2005-07-05
28 SOA-based metro WDM systems (invited) 2005-07-05
27 Tunable frequency erbium-doped fiber ring laser with 25 GHz channel spacingon the ITU-T grid 2005-03-06
26 A simple and low-cost 1625 nm OTDR monitoring system for 350 km WDM 2005-03-06
25 A variable-gain optical amplifier for metro WDM networks with mixed span losses: A gain-clamped semiconductor optical amplifier combined with a Raman 2005-03-06
24 Optical characteristics of InGaAs quantum dots on (100) InP substrate for 1.5 μm laser diodes 2004-12-16
23 Optical characteristics of In(Ga)As quantum dots on InP substrate and their lasing characteristics at 1.5 um at room temperature 2004-11-05
22 An optical amplifier for metro WDM networks, based on a gain-clamped semiconductor optical amplifier (invited) 2004-11-04
21 Room temperature operation of 1.5 μm InGaAs/InGaAsP/InP quantum dot lasers grown by MOCVD 2004-09-18
20 Effect of wavefunction confinement in quantum dots on level spacing, lifetime and temperature behaviors 2004-09-18
19 Room temperature cw operation of InGaAs/InGaAsP/InP quantum dot lasers 2004-09-16
18 Carrier localization behavior in InGaNAs/GaAs(N) quantum wells 2004-07-01
17 Strong carrier-phonon interaction in InAs/GaAs quantum dot: Fluorescence line narrowing observed from controllable III-V intrinsic localization center 2004-07-01
16 Optical characteristics of In(Ga)As quantum dots on InP substrate for 1.5 um laser diodes 2004-07-01
15 Relation of energy level spacing, dot height and carrier lifetime in quantum dots from a view point of zero dimensionality 2004-07-01
14 Optical and Lasing Characteristics of 1.55 um InGaAs/InGaAsP/InP Quantum Dots Grown by MOCVD 2004-05-01
13 Demonstration of 16×10 Gb/s WDM transmission over 4×40 km of SMF using SOAs combined with Raman-pumped DCFs under dynamic add/drop situations 2004-02-01
12 Effective suppression of signal-wavelength dependent transients in a pump-controlled L-band EDFA 2004-02-01
11 16×10 Gb/s WDM transmission over 160 km of SMF using gain clamped SOAs with Raman pumped dispersion compensating fibers 2003-09-01
10 Optical Characteristics of InAsN/GaAs Quantum Dots Emitting at 1.3 um 2003-08-01
9 A Simple Method to Determine Strains in InGaNAs/GaAs Quantum Wells 2003-08-01
8 A gain clamped semiconductor optical amplifier combined with a distributed Raman fiber amplifier: a good candidate as an inline amplifier for WDM netw 2003-07-01
7 Demonstration of 16x10 Gb/s WDM transmission over 5x80 km using distributed Raman amplifiers and gain clamped semiconductor amplifiers as inline ampli 2003-06-01
6 Effects of Nitrogen Incorporation in In(Ga)As/GaAs Quantum Dots 2002-10-01
5 Electron and hole sublevels of quantum dots 2002-07-01
4 Determination of electron and hole sub-levels from InAs/GaAs quantum dots 2002-07-01
3 InAs/GaAs quantum dots emitting narrow and strong PL at 1.3 um 2002-07-01
2 InAs/GaAs quantum dots emitting at longer wavelength:closer to zero dimensional system 2002-07-01
1 Demonstration of a low-cost flat-gain L-band erbium-doped fiber amplifier by incorporatinga fiber Bragg grating 2002-02-01